先进电子封装技术与关键材料丛书--TSV3DRFIntegration：HR-SiInterposerTechnology（TSV三维射频集成——高阻硅转接板技术）

三维射频集成应用是硅通孔（TSV）三维集成技术的重要应用发展方向。随着5G与毫米波应用的兴起，基于高阻硅TSV晶圆级封装的薄膜体声波谐振器（FBAR） 器件、射频微电子机械系统（RF MEMS）开关器件等逐渐实现商业化应用，TSV三维异质射频集成逐渐成为先进电子信息装备领域工程化应用的关键技术。
本书全面阐述面向三维射频异质集成应用的高阻硅TSV转接板技术，包括设计、工艺、电学特性评估与优化等研究，从TSV、共面波导传输线（CPW）等基本单元结构入手，到集成无源元件（IPD）以及集成样机，探讨金属化对高频特性的影响规律；展示基于高阻硅TSV的集成电感、微带交指滤波器、天线等IPD元件；详细介绍了2.5D集成四通道L波段接收组件、5～10GHz信道化变频接收机、集成微流道散热的2～6GHz GaN 功率放大器模块等研究案例。本书也系统综述了高阻硅TSV三维射频集成技术的国内外最新研究进展，并做了详细的对比分析与归纳总结。本书兼顾深度的同时，力求从较为全面的视角，为本领域研究人员提供启发思路，以助力我国在TSV三维射频异质集成技术研究的发展进步。
本书可供微电子先进封装以及射频模组领域研究人员、工程技术人员参考，也可供相关专业高等院校研究生及高年级本科生学习参考。

马盛林，厦门大学机电工程系副教授，北京大学博士，北京大学微纳米加工科学与技术国家重点实验室客座研究员。发表论文50余篇，获得专利20余项，主要研究方向为基于硅通孔的三维集成技术、MEMS及其应用。
金玉丰，北京大学教授，东南大学博士，担任北京大学微纳米国家级重点实验室主任多年。撰写三本关于先进封装技术的书籍，研究领域包括MEMS传感器和与硅通孔相关的微系统三维集成技术。

三维射频集成应用是硅通孔（TSV）三维集成技术重要应用发展方向。随着5G与毫米波应用的兴起，基于高阻硅TSV晶圆级封装的FBAR器件、RF MEMS开关器件、基于TGV的滤波器等逐渐实现商业化应用，TSV三维异质射频集成逐渐成为先进电子信息装备领域工程化应用的关键技术。 1. 本书全面阐述面向三维射频异质集成应用的高阻硅TSV转接板技术，包括设计、工艺、电学特性评估与优化等研究，从TSV、CPW等基本单元结构入手，到IPD元件以及集成样机，探讨金属化对高频特性的影响规律； 2. 展示基于高阻硅TSV的集成电感、微带交指滤波器、天线等IPD元件； 3. 详细介绍了2.5D集成四通道L波段接收组件、5-10GHz信道化变频接收机、集成微流道散热的2-6GHz GaN PA 模块等研究案例。 4. 本书也系统综述了高阻硅TSV三维射频集成技术的国内外研究进展，并做了详细的对比分析与归纳总结。 5. 本书兼顾深度的同时，力求从较为全面的视角，为本领域研究人员提供启发思路，以助力我国在TSV三维射频异质集成技术研究的发展进步。

The technical level and development scale of the integrated circuit (IC) industry is one of the important indicators to measure a country’s industrial competitiveness and comprehensive national strength, and is the source of modern economic development.The application of IC has already become routine in various industries, such as military satellites,radar, civilian automotive electronics,smart equipment, and consumer electronics,etc. At present,the IC industry has formed three major industrial chains of design,manufacturing and packaging testing, which have become the indispensable pillar in the IC industry.
IC packaging is an indispensable process in the IC industry,which is the bridge from chip to device and device to system.It is a key fundamental manufacturing part of the IC industry and a competitive commanding height for the core device manufacturing of the IC industry.
With the rapid development of IC technology，higher and higher requirements for miniaturization,multi-function,high reliability and low cost of electronic products are put forward. Facing this situation，the electronic packaging materials and technologies are undergoing rapid development,promoting lots of advanced packaging materials.Advanced electronic packaging materials and technologies are the core of IC packaging.
In order to promote the development of China’s advanced electronic packaging industry and meet the urgent needs of researchers ranged from teaching and scientific study to engineering developing in the field of electronic packaging，the editorial committee has invited famous specialists to write the Series on Advanced Electronic Packaging Technology and Key Materials in recent years (English ver- sion). The series includes：“Advanced Polyimide Materials” “From LED to Solid State Lighting” “Freeform Optics for LED Packages and Applications ” “Modeling, Analysis, Design and Tests for Electronics Packaging beyond Moore ” “TSV 3D RF Integration” etc.
This series of books systematically describes the advanced electronic packaging from three aspects： advanced packaging materials, advanced packaging technologies and advanced packaging simulation design methods.This series covers the most advanced packaging materials such as polyimide materials and packaging technologies such as freeform optical technology，TSV (through-silicon via technology) packaging, and advanced packaging simulation design methods such as multi-physics analysis and applications. In addition,this series also makes a planning outlook and forecast for the development trend of advanced electronic packaging.
This series of books is of great worth for workers engaged in scientific research, production and application in electronic packaging and related industries,and also has great reference significance for teachers and students of related majors in higher education institutions.
We believe that the publication of this series of books will play a positive role in promoting the development of China’s IC industry and advanced electronic packaging industry.
Finally，we would like to express our sincere gratitude to our colleagues who have worked hard in the preparation of this series. We also express our heartfelt thanks to those who participated in organizing the publication of this series!

C.P. Wong
IEEE Fellow
Member of Academy of Engineering of the USA
Member of Chinese Academy of Engineering
Former Bell Labs Fellow
Dean of Engineering, The Chinese University of Hong Kong
Regents’ Professor, Georgia Institute of Technology, Atlanta, GA 30332,USA

Sheng Liu,Ph.D.
IEEE Fellow,ASME Fellow
Chang Jiang Scholar Professor
Dean,School of Power and Mechanical Engineering
Founding Executive Director, Institute of Technological Sciences
Associate Dean of School of Microelectronics,Wuhan University
Professor of School of Mechanical Science and Engineering
Huazhong University of Science and Technology
Wuhan, Hubei,China

Wenhui Zhu, Ph.D.
National Invited Professor
College of Mechanical and Electrical Engineering
Central South University
Changsha, Hunan, China

Preface by Yufeng Jin	ix

Preface by Shenglin Ma	xi

Acknowledgments	xv

About the authors	xvii

1 Introduction to HR-Si interposer technology	1
1.1 Background	1
1.2 3D RF heterogeneous integration scheme 	2
1.3 HR-Si interposer technology	7
1.4 TGV interposer technology	16
1.5 Summary	23
1.6 Main work of this book	24
References	25

2 Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration	27
2.1 Introduction	27
2.2 Design and fabrication process of HR-Si TSV interposer	31
2.3 Design and analysis of RF transmission structure built on HR-Si TSV interposer	38
2.4 Research on HR-Si TSV interposer fabrication process	43
2.4.1 Double-sided deep reactive ion etching (DRIE) to open HR-Si TSV	43
2.4.2 Thermal oxidation to form firm insulation layer	44
2.4.3 Patterned Cu electroplating to achieve metallization and establish RDL layer	45
2.4.4 Electroless nickel electroless palladium immersion gold (ENEPIG)	54
2.4.5 Surface passivation	54
2.5 Electrical characteristics analysis of transmission structure on HR-Si TSV interposer	55
2.6 Conclusion	61
References	63

3 Design, verification, and optimization of novel 3D RF TSV based on HR-Si interposer	65
3.1 Introduction	65
3.2 HR-Si TSV-based coaxial-like transmission structure	69
3.3 Redundant RF TSV transmission structure	70
3.4 Sample processing and test result analysis	72
3.5 Optimization of HR-Si TSV interposer	83
3.6 Conclusion	90
References	93

4 HR-Si TSV integrated inductor	95
4.1 Introduction	95
4.2 HR-Si TSV interposer integrated planar inductor	96
4.3 Research on 3D inductor based on HR-Si interposer	113
4.4 Summary	123
References	123

5 Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer	125
5.1 Introduction	125
5.2 Four-channel 2.5D heterogeneous integrated L-band receiver	126
5.3 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer	132
5.3.1 HR-Si interposer integrated microstrip interdigital filter	134
5.3.2 Design, fabrication, and test of HR-Si interposer	142
5.3.3 3D heterogeneous integrated assembly and test	145
5.4 Conclusions 	150
References	151

6 HR-Si interposer embedded microchannel	153
6.1 Introduction	153
6.2 Design of a HR-Si interposer embedded microchannel	158
6.3 Thermal characteristics analy sis of a TSV interposer embedded microchannel	161
6.3.1 Simplified calculation based on a variable diffusion angle	162
6.3.2 Direct calculation based on analytical formula	163
6.3.3 A fitting formula based on simulation results	164
6.3.4 Equivalent thermal resistance network based on the high thermal conductivity path	164
6.4 Process development of a TSV interposer embedded microchannel	172
6.5 Characterization of cooling capacity of HR-Si interposer with an embedded microchannel	176
6.6 Evaluation of HR-Si interposer embedded with a cooling microchannel	178
6.7 Application verification of HR-Si interposer embedded with microchannel	188
6.8 Conclusions	191
References	192

7 Patch antenna in stacked HR-Si interposers 	197
7.1 Introduction	197
7.2 Theoretical basis of patch antenna	200
7.3 Design of a patch antenna in stacked HR-Si interposers	200
7.4 Processing of a patch antenna in stacked HR-Si interposers	213
7.5 Test and analysis of patch antenna in stacked HR-Si TSV interposer	213
7.6 Summary	222
References	222

8 Through glass via technology	225
8.1 Introduction	225
8.2 TGV fabrication	225
8.3 Metallization of TGV	228
8.4 Passive devices based on TGV technology	230
8.4.1 Technology description	230
8.4.2 MIM capacitor	230
8.4.3 TGV-based bandpass filter	231
8.5 Embedded glass fan-out wafer-level package technology	235
8.5.1 Technology description	235
8.5.2 AIP enabled by eGFO package technology	236
8.5.3 3D RF integration enabled by eGFO package technology	242
8.6 2.5D heterogeneous integrated L-band receiver based on TGV interposer	242
8.7 Conclusions	249
References	250

9 Conclusion and outlook	251

Appendix 1 Abbreviations 	255

Appendix 2 Nomenclature	259

Appendix 3 Conversion factors	267

Index	269